GATE Solid State Physics: conductivity, electron and hole statistics in intrinsic and extrinsic semiconductors, mobility and effective mass – Previous Year Questions
8 GATE previous year questions on conductivity, electron and hole statistics in intrinsic and extrinsic semiconductors, mobility and effective mass (Solid State Physics, Physics) with answers and explanations, from every paper.
- GATE 2022 PH Q52 – In a Hall effect experiment on an intrinsic semiconductor, which of the following statements are correct?
- GATE 2023 PH Q16 – The Hall experiment is carried out with a non-magnetic semiconductor. The current I is along the x-axis and the magnetic field B is along the z-axis.…
- GATE 2023 PH Q20 – For nonrelativistic electrons in a solid, different energy dispersion relations (with effective masses ma∗, mb ∗, and mc∗) are schematically shown in…
- GATE 2026 PH Q32 – For the energy dispersion of an electron in a one-dimensional solid E(k)=E 0-2(ka), the ratio of the effective mass of the electron in the solid to…
- GATE 2026 PH Q54 – The dispersion (E(k)) of the conduction band (CB) and valence band (VB) for a semiconductor are shown schematically in the figure. Considering the…
- GATE 2025 PH Q17 – As per the Drude model of metals, the electrical resistance of a metallic wire of length L and cross-section area A is (consider as relaxation time, m…
- GATE 2024 PH Q27 – The temperature dependence of the electrical conductivity (σ) of three intrinsic semiconductors A, B and C is shown in figure. Let EA, EB and EC be…
- GATE 2024 PH Q50 – The semiconductor shown carries 2 mA along +x. Majority carrier concentration is 12.51013 cm−3, with negligible minority carriers. In a constant +z…