GATE 2020 EE – Question 35
The cross-section of a metal-oxide-semiconductor structure is shown schematically. Starting from an uncharged condition, a bias of +3 V is applied to the gate contact with respect to the body contact. The charge inside the silicon dioxide layer is then measured to be $+Q$. The total charge contained within the dashed box shown, upon application of bias, expressed as a multiple of $Q$ (absolute value in Coulombs, rounded off to the nearest integer) is ________.
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Correct answer: 0
Explanation
The dashed box encloses the gate, oxide and body. The structure started uncharged and is isolated apart from the bias, so the charge on the gate, in the oxide and in the silicon add up to zero. The total charge inside the dashed box is 0.