GATE Analog and Digital Electronics: Amplifiers: biasing, equivalent circuit and frequency response – Previous Year Questions
15 GATE previous year questions on Amplifiers: biasing, equivalent circuit and frequency response (Analog and Digital Electronics, Electrical Engineering) with answers and explanations, from every paper.
- GATE 2017 EE Q62 – The circuit shown in the figure uses matched transistors with a thermal voltage V T = 25 mV. The base currents of the transistors are negligible. The…
- GATE 2015 EE Q24 – In the given circuit, the silicon transistor has = 75 and a collector voltage V C = 9 V. Then the ratio of R B and R C is .
- GATE 2016 EE Q22 – A transistor circuit is given below. The Zener diode breakdown voltage is 5.3 V as shown. Take base to emitter voltage drop to be 0.6 V. The value of…
- GATE 2018 EE Q51 – In the circuit shown in the figure, the bipolar junction transistor (BJT) has a current gain =100. The base-emitter voltage drop is a constant, V…
- GATE 2019 EE Q16 – A system transfer function is H(s)=a 1s2+b 1s+c 1a 2s2+b 2s+c 2. If a 1=b 1=0, and all other coefficients are positive, the transfer function…
- GATE 2019 EE Q26 – Given, V gs is the gate-source voltage, V ds is the drain source voltage, and V th is the threshold voltage of an enhancement type NMOS transistor,…
- GATE 2019 EE Q43 – The enhancement type MOSFET in the circuit below operates according to the square law. nC ox=100\ A/V2, the threshold voltage (V T) is 500 mV. Ignore…
- GATE 2020 EE Q24 – A common-source amplifier with a drain resistance, R D=4.7\ k, is powered using a 10 V power supply. Assuming that the transconductance, g m, is 520\…
- GATE 2020 EE Q35 – The cross-section of a metal-oxide-semiconductor structure is shown schematically. Starting from an uncharged condition, a bias of +3 V is applied to…
- GATE 2021 EE Q33 – In the BJT circuit shown, beta of the PNP transistor is 100. Assume V BE=-0.7 V. The voltage across R C will be 5 V when R 2 is k. (Round off to 2…
- GATE 2022 EE Q12 – For an ideal MOSFET biased in saturation, the magnitude of the small signal current gain for a common drain amplifier is
- GATE 2023 EE Q59 – The Zener diode in circuit has a breakdown voltage of 5 V. The current gain of the transistor in the active region is 99. Ignore base-emitter voltage…
- GATE 2024 EE Q42 – A BJT biasing circuit is shown in the figure, where V BE=0.7 V and =100. The Quiescent Point values of V CE and I C are respectively
- GATE 2025 EE Q16 – Which one of the following statements is true about the small signal voltage gain of a MOSFET based single stage amplifier?
- GATE 2025 EE Q38 – In the circuit, I DC is an ideal current source. The transistors M 1 and M 2 are assumed to be biased in saturation, wherein V in is the input signal…