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GATE 2019 EC – Question 18

Electronic Devices · Energy Bands and Carrier Concentration · 1 mark · Multiple choice

Which one of the following options describes correctly the equilibrium band diagram at T=300 K of a Silicon $pnn^+p^{++}$ configuration shown in the figure?

Diagram for GATE 2019 EC question 18
  1. Band diagram (A)
  2. Band diagram (B)
  3. Band diagram (C)
  4. Band diagram (D)

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Show answer and explanation

Correct answer: (A) Band diagram (A)

Explanation

In equilibrium the Fermi level is flat across the structure. Moving from $p$ to $n$, $n^+$ and $p^{++}$, the conduction band edge is closest to $E_F$ in the $n^+$ region and $E_F$ drops into the valence band in the heavily doped $p^{++}$ region, with a step at each junction. Diagram (A) is the one with a flat $E_F$ and these relative positions.