GATE Electronic Devices: Energy Bands and Carrier Concentration – Previous Year Questions
14 GATE previous year questions on Energy Bands and Carrier Concentration (Electronic Devices, Electronics and Communication Engineering) with answers and explanations, from every paper.
- GATE 2017 EC Q19 – A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. Which one of…
- GATE 2016 EC Q21 – A small percentage of impurity is added to an intrinsic semiconductor at 300 K. Which one of the following statements is true for the energy band…
- GATE 2018 EC Q55 – A junction is made between p- Si with doping density N A1=1015\ cm-3 and p Si with doping density N A2=1017\ cm-3. Given: Boltzmann constant…
- GATE 2019 EC Q18 – Which one of the following options describes correctly the equilibrium band diagram at T=300 K of a Silicon pnn+p++ configuration shown in the figure?
- GATE 2020 EC Q16 – A single crystal intrinsic semiconductor is at a temperature of 300 K with effective density of states for holes twice that of electrons. The thermal…
- GATE 2021 EC Q16 – A bar of silicon is doped with boron concentration of 1016\ cm-3 and assumed to be fully ionized. It is exposed to light such that electron-hole pairs…
- GATE 2021 EC Q17 – The energy band diagram of a p-type semiconductor bar of length L under equilibrium condition (i.e., the Fermi energy level E F is constant) is shown…
- GATE 2022 EC Q17 – In a non-degenerate bulk semiconductor with electron density n=1016\ cm-3, the value of E C-E Fn=200 meV, where E C and E Fn denote the bottom of the…
- GATE 2023 EC Q16 – In a semiconductor, if the Fermi energy level lies in the conduction band, then the semiconductor is known as
- GATE 2023 EC Q17 – For an intrinsic semiconductor at temperature T=0\ K, which of the following statement is true?
- GATE 2023 EC Q61 – In a semiconductor device, the Fermi-energy level is 0.35 eV above the valence band energy. The effective density of states in the valence band is…
- GATE 2024 EC Q22 – For non-degenerately doped n-type silicon, which one of the following plots represents the temperature (T) dependence of free electron concentration…
- GATE 2024 EC Q63 – A non-degenerate n-type semiconductor has 5% neutral dopant atoms. Its Fermi level is located at 0.25 eV below the conduction band (E C) and the donor…
- GATE 2025 EC Q31 – Which of the following can be used as an n-type dopant for silicon? Select the correct option(s).