The GATE Grind

GATE 2026 EC – Question 25

Electronic Devices · P-N Junction and Semiconductor Devices · 1 mark · Multiple select

Consider a p-n junction diode when it is forward biased with 2 V. Which of the following is/are the correct magnitude(s) of the energy difference between quasi Fermi-levels, $E_{fn}$ in the n-side and $E_{fp}$ in the p-side?

  1. 2 eV
  2. 1 eV
  3. 2 V
  4. 1 V

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Show answer and explanation

Correct answer: (A) 2 eV

Explanation

Under forward bias $V$, the quasi-Fermi-level separation is $E_{fn}-E_{fp}=qV$, i.e. 2 eV for 2 V. An energy is expressed in eV, not in volts.