GATE Electronic Devices: P-N Junction and Semiconductor Devices – Previous Year Questions
36 GATE previous year questions on P-N Junction and Semiconductor Devices (Electronic Devices, Electronics and Communication Engineering) with answers and explanations, from every paper.
- GATE 2017 EC Q20 – An n+-n Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of N D1 = 1 1018 cm-3 and N D2 = 1 1015 cm-3…
- GATE 2017 EC Q21 – For a narrow base PNP BJT, the excess minority carrier concentrations ( n E for emitter, p B for base, n C for collector) normalized to equilibrium…
- GATE 2017 EC Q48 – As shown, two Silicon (Si) abrupt p-n junction diodes are fabricated with uniform donor doping concentrations of N D1 = 1014 cm-3 and N D2 = 1016 cm-3…
- GATE 2015 EC Q19 – A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if
- GATE 2015 EC Q43 – The built-in potential of an abrupt p-n junction is 0.75 V. If its junction capacitance (C J) at a reverse bias (V R) of 1.25 V is 5 pF, the value of…
- GATE 2016 EC Q22 – Consider the following statements for a metal oxide semiconductor field effect transistor (MOSFET): P: As channel length reduces, OFF-state current…
- GATE 2016 EC Q46 – Consider a silicon p-n junction with a uniform acceptor doping concentration of 1017 cm-3 on the p-side and a uniform donor doping concentration of…
- GATE 2016 EC Q47 – Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume that WL = 4, N C ox =…
- GATE 2018 EC Q17 – In a p-n junction diode at equilibrium, which one of the following statements is NOT TRUE?
- GATE 2018 EC Q28 – A p-n step junction diode with a contact potential of 0.65 V has a depletion width of 1 m at equilibrium. The forward voltage (in volts, correct to…
- GATE 2018 EC Q30 – There are two photolithography systems: one with light source of wavelength 1=156 nm (System 1) and another with light source of wavelength 2=325 nm…
- GATE 2018 EC Q40 – Red (R), Green (G) and Blue (B) Light Emitting Diodes (LEDs) were fabricated using p-n junctions of three different inorganic semiconductors having…
- GATE 2018 EC Q47 – A dc current of 26\ A flows through the circuit shown. The diode in the circuit is forward biased and it has an ideality factor of one. At the…
- GATE 2018 EC Q54 – A solar cell of area 1.0 cm2, operating at 1.0 sun intensity, has a short circuit current of 20 mA, and an open circuit voltage of 0.65 V. Assuming…
- GATE 2019 EC Q20 – The figure shows the high-frequency C-V curve of a MOS capacitor (at T = 300 K) with ms=0 V and no oxide charges. The flat-band, inversion, and…
- GATE 2019 EC Q45 – The quantum efficiency () and responsivity (R) at a wavelength (in m) in a p-i-n photodetector are related by
- GATE 2019 EC Q59 – In an ideal pn junction with an ideality factor of 1 at T=300 K, the magnitude of the reverse-bias voltage required to reach 75% of its reverse…
- GATE 2020 EC Q17 – Consider the recombination process via bulk traps in a forward biased pn homojunction diode. The maximum recombination rate is U max. If the electron…
- GATE 2020 EC Q41 – A one-sided abrupt pn junction diode has a depletion capacitance C D of 50 pF at a reverse bias of 0.2 V. The plot of 1/C D2 versus the applied…
- GATE 2020 EC Q42 – The band diagram of a p-type semiconductor with a band-gap of 1 eV is shown. Using this semiconductor, a MOS capacitor having V TH of -0.16 V, C' ox…
- GATE 2020 EC Q43 – The base of an npn BJT T1 has a linear doping profile N B(x) as shown below. The base of another npn BJT T2 has a uniform doping N B of 1017\ cm-3.…
- GATE 2020 EC Q44 – A pn junction solar cell of area 1.0 cm2, illuminated uniformly with 100 mW cm-2, has the following parameters: Efficiency =15\%, open circuit voltage…
- GATE 2021 EC Q40 – For an n-channel silicon MOSFET with 10 nm gate oxide thickness, the substrate sensitivity ( V T/ V BS ) is found to be 50 mV/V at a substrate voltage…
- GATE 2021 EC Q52 – A silicon P-N junction is shown in the figure. The doping in the P region is 51016\ cm-3 and doping in the N region is 101016\ cm-3. The parameters…
- GATE 2022 EC Q34 – An ideal MOS capacitor (p-type semiconductor) is shown in the figure. The MOS capacitor is under strong inversion with V G=2 V. The corresponding…
- GATE 2022 EC Q47 – Select the CORRECT statement(s) regarding semiconductor devices.
- GATE 2023 EC Q19 – For a MOS capacitor, V fb and V t are the flat-band voltage and the threshold voltage, respectively. The variation of the depletion width (W dep) for…
- GATE 2024 EC Q52 – Which of the following statements is/are true for a BJT with respect to its DC current gain ?
- GATE 2024 EC Q61 – A MOS capacitor made with p-type silicon. It has an oxide thickness of 100 nm, a fixed positive oxide charge of 10-8 C/cm2 at the oxide-silicon…
- GATE 2024 EC Q64 – An NMOS transistor operating in the linear region has I DS of 5 μA at V DS of 0.1 V. Keeping V GS constant, the V DS is increased to 1.5 V. Given that…
- GATE 2024 EC Q65 – The photocurrent of a PN junction diode solar cell is 1 mA. The voltage corresponding to its maximum power point is 0.3 V. If the thermal voltage is…
- GATE 2025 EC Q63 – An ideal p-n junction germanium diode has a reverse saturation current of 10 μA at 300 K. The voltage (in Volts, rounded off to two decimal places) to…
- GATE 2026 EC Q14 – Consider carrier transport in a Zener diode in the breakdown region. Which is the dominant transport mechanism for current flow in this case?
- GATE 2026 EC Q25 – Consider a p-n junction diode when it is forward biased with 2 V. Which of the following is/are the correct magnitude(s) of the energy difference…
- GATE 2026 EC Q29 – Figure shows the output characteristics of two different Bipolar Junction Transistors (BJT), BJT 1 with magnitude of Early voltage V A1 , and BJT 2…
- GATE 2026 EC Q54 – Consider an LED based on a direct bandgap semiconductor material with energy bandgap 1.3 eV. Given: Plank’s constant, h=6.6310-34 J s and speed of…