The GATE Grind

GATE 2014 EC (EC2) – Question 19

Electronic Devices · P-N Junction and Semiconductor Devices · 1 mark · Multiple choice

Increasing base recombination in a BJT increases ______.

  1. common-emitter DC current gain β
  2. breakdown voltage BV_CEO
  3. unity-gain cutoff frequency f_T
  4. transconductance g_m

Practise this question in The GATE Grind →

Show answer and explanation

Correct answer: (B) breakdown voltage BV_CEO

Explanation

More base recombination increases the base current needed for a given collector current, reducing β. The common-emitter breakdown voltage is approximately BVCBO/(β+1)^(1/m), so reducing β raises BVCEO by weakening avalanche feedback. Therefore **BVCEO,B**, increases; current gain does not.