GATE 2022 EC – Question 34

An ideal MOS capacitor ($p$-type semiconductor) is shown in the figure. The MOS capacitor is under strong inversion with $V_G=2$ V. The corresponding inversion charge density ($Q_{IN}$) is $2.2\ \mu\text{C/cm}^2$. Assume oxide capacitance per unit area as $C_{ox}=1.7\ \mu\text{F/cm}^2$. For $V_G=4$ V, the value of $Q_{IN}$ is ________ $\mu\text{C/cm}^2$ (rounded off to one decimal place).