For the source’s standard n-channel MOSFET model in saturation, CGS,CGD,CDS are gate–source,gate–drain,drain–source parasitic capacitances. Which ordering is intended?
In saturation the channel is pinched off toward the drain, strongly reducing the intrinsic gate–drain contribution, while gate–source retains the channel contribution. In the simplified device comparison used by the source, the residual drain–source capacitance is smaller, giving CGS>CGD>CDS, A. Detailed parasitic magnitudes can depend on device geometry and bias; this is the published model ordering.
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