GATE Analog and Digital Electronics: Semiconductor Devices – Previous Year Questions
10 GATE previous year questions on Semiconductor Devices (Analog and Digital Electronics, Biomedical Engineering) with answers and explanations, from every paper.
- GATE 2020 BM Q53 – A silicon diode obeys the exponential V–I model. Its current is 1 mA at 0.7 V. With thermal voltage 25.3 mV, find nearest current when voltage is 0.8…
- GATE 2021 BM Q44 – The shown saturated NMOS has μₙCox=200 μA/V²,W=40 μm,L=1 μm, threshold 0.4 V and gmb/gm=0.1. A small input is applied at the bulk terminal. Neglect…
- GATE 2022 BM Q55 – The shown saturation-biased MOSFET has Vth=0.5 V, W=100 μm, L=0.1 μm and μₙCox=100 μA/V². Gate bias is 0.7 V, drain bias 1.25 V, supply 2.5 V; drain…
- GATE 2022 BM Q56 – The shown PNP BJTs are biased with VEB=0.7 V. Neglect base currents in DC calculations and assume infinite transistor input and output impedance.…
- GATE 2023 BM Q44 – In the shown circuit the sinusoidal input is 2.5 V peak to peak. Both capacitors are 20 μF, diode knee voltage is zero, and Rₗ is almost infinite.…
- GATE 2024 BM Q39 – Which waveform represents Vo in the shown circuit driven by Vs=2sin(2πt) V? The Zener breakdown voltage is 1 V and its forward voltage is idealized to…
- GATE 2024 BM Q60 – The diode in the shown AC bridge is ideal. Source is sin(t) V,with 1 H and 1 Ω in one side and 1 Ω and 1 F in the other. Find the ammeter reading in…
- GATE 2025 BM Q11 – Two 1 cm³ cuboids are made of gold and undoped silicon. What happens to their resistivities as temperature rises from 300 K to 350 K?
- GATE 2026 BM Q26 – For the source’s standard n-channel MOSFET model in saturation, CGS,CGD,CDS are gate–source,gate–drain,drain–source parasitic capacitances. Which…
- GATE 2026 BM Q28 – A diode has the I–V characteristic shown, with knee voltage 0.8 V. It feeds the initially discharged 10 μF capacitor from V in=100(1000t) V. Reverse…