GATE 2019 EC – Question 23
A standard CMOS inverter is designed with equal rise and fall times ($\beta_n=\beta_p$). If the width of the pMOS transistor in the inverter is increased, what would be the effect on the LOW noise margin ($NM_L$) and the HIGH noise margin $NM_H$?
Practise this question in The GATE Grind →
Show answer and explanation
Correct answer: (A) $NM_L$ increases and $NM_H$ decreases.
Explanation
A larger pMOS (larger $\beta_p/\beta_n$) moves the inverter switching threshold $V_M$ upwards. A higher threshold means $V_{IL}$ rises (so $NM_L=V_{IL}-V_{OL}$ increases) and $V_{IH}$ rises towards $V_{OH}$ (so $NM_H=V_{OH}-V_{IH}$ decreases).