GATE 2019 EC – Question 60

Consider a long-channel MOSFET with a channel length $1\ \mu$m and width $10\ \mu$m. The device parameters are acceptor concentration $N_A=5\times10^{16}\ \text{cm}^{-3}$, electron mobility $\mu_n=800\ \text{cm}^2/\text{V-s}$, oxide capacitance/area $C_{ox}=3.45\times10^{-7}\ \text{F/cm}^2$, threshold voltage $V_T=0.7$ V. The drain saturation current ($I_{D,sat}$) for a gate voltage of 5 V is ________ mA (rounded off to two decimal places).