GATE Analog Circuits: BJT and MOSFET Amplifiers – Previous Year Questions
40 GATE previous year questions on BJT and MOSFET Amplifiers (Analog Circuits, Electronics and Communication Engineering) with answers and explanations, from every paper.
- GATE 2017 EC Q23 – A good transconductance amplifier should have
- GATE 2017 EC Q24 – The Miller effect in the context of a Common Emitter amplifier explains
- GATE 2017 EC Q49 – In the figure shown, the npn transistor acts as a switch. [Figure: A +5 V supply feeds a 4.8\ k collector resistor. The base is driven by V in(t)…
- GATE 2017 EC Q50 – For the circuit shown, assume that the NMOS transistor is in saturation. Its threshold voltage V tn = 1 V and its transconductance parameter n C…
- GATE 2017 EC Q51 – For the DC analysis of the Common-Emitter amplifier shown, neglect the base current and assume that the emitter and collector currents are equal.…
- GATE 2015 EC Q44 – A MOSFET in saturation has a drain current of 1 mA for V DS = 0.5 V. If the channel length modulation coefficient is 0.05 V-1, the output resistance…
- GATE 2015 EC Q49 – For the NMOSFET in the circuit shown, the threshold voltage is V th, where V th > 0. The source voltage V SS is varied from 0 to V DD. Neglecting the…
- GATE 2015 EC Q52 – In the circuit shown, I 1 = 80 mA and I 2 = 4 mA. Transistors T 1 and T 2 are identical. Assume that the thermal voltage V T is 26 mV at 27 °C. At 50…
- GATE 2016 EC Q28 – What is the voltage V out in the following circuit?
- GATE 2018 EC Q11 – Two identical nMOS transistors M 1 and M 2 are connected as shown below. The circuit is used as an amplifier with the input connected between G and S…
- GATE 2018 EC Q53 – In the circuit shown below, the (W/L) value for M 2 is twice that for M 1. The two nMOS transistors are otherwise identical. The threshold voltage V T…
- GATE 2019 EC Q19 – The correct circuit representation of the structure shown in the figure is
- GATE 2019 EC Q50 – In the circuits shown, the threshold voltage of each nMOS transistor is 0.6 V. Ignoring the effect of channel length modulation and body bias, the…
- GATE 2019 EC Q60 – Consider a long-channel MOSFET with a channel length 1\ m and width 10\ m. The device parameters are acceptor concentration N A=51016\ cm-3, electron…
- GATE 2019 EC Q64 – In the circuit shown, the threshold voltages of the pMOS ( V tp ) and nMOS (V tn) transistors are both equal to 1 V. All the transistors have the same…
- GATE 2019 EC Q65 – In the circuit shown, V 1=0 and V 2=V dd. The other relevant parameters are mentioned in the figure. Ignoring the effect of channel length modulation…
- GATE 2020 EC Q45 – For the BJT in the amplifier shown below, V BE=0.7 V, kT/q=26 mV. Assume that BJT output resistance (r o) is very high and the base current is…
- GATE 2020 EC Q46 – An enhancement MOSFET of threshold voltage 3 V is being used in the sample and hold circuit given below. Assume that the substrate of the MOS device…
- GATE 2020 EC Q47 – Using the incremental low frequency small-signal model of the MOS device, the Norton equivalent resistance of the following circuit is
- GATE 2020 EC Q54 – In the voltage regulator shown below, V I is the unregulated input at 15 V. Assume V BE=0.7 V and the base current is negligible for both the BJTs. If…
- GATE 2021 EC Q18 – In the circuit shown in the figure, the transistors M 1 and M 2 are operating in saturation. The channel length modulation coefficients of both the…
- GATE 2021 EC Q54 – For the transistor M 1 in the circuit shown in the figure, nC ox=100\ A/V2 and (W/L)=10, where n is the mobility of electron, C ox is the oxide…
- GATE 2022 EC Q18 – Consider the CMOS circuit shown in the figure (substrates are connected to their respective sources). The gate width (W) to gate length (L) ratios (…
- GATE 2022 EC Q20 – The ideal long channel nMOSFET and pMOSFET devices shown in the circuits have threshold voltages of 1 V and −1 V, respectively. The MOSFET substrates…
- GATE 2022 EC Q40 – Consider an ideal long channel nMOSFET (enhancement-mode) with gate length 10\ m and width 100\ m. The product of electron mobility ( n) and oxide…
- GATE 2022 EC Q59 – Consider the circuit shown with an ideal long channel nMOSFET (enhancement-mode, substrate is connected to the source). The transistor is…
- GATE 2023 EC Q21 – In the circuit shown below, V 1 and V 2 are bias voltages. Based on input and output impedances, the circuit behaves as a
- GATE 2023 EC Q22 – A cascade of common-source amplifiers in a unity gain feedback configuration oscillates when
- GATE 2023 EC Q64 – In the circuit below, the voltage V L is V (rounded off to two decimal places).
- GATE 2024 EC Q17 – In the circuit below, assume that the long channel NMOS transistor is biased in saturation. The small signal trans-conductance of the transistor is g…
- GATE 2024 EC Q18 – For the closed loop amplifier circuit shown below, the magnitude of open loop low frequency small signal voltage gain is 40. All the transistors are…
- GATE 2024 EC Q51 – In the circuit shown below, the transistors M 1 and M 2 are biased in saturation. Their small signal transconductances are g m1 and g m2,…
- GATE 2025 EC Q21 – A simplified small-signal equivalent circuit of a BJT-based amplifier is given below. The small-signal voltage gain v o/v s (in V/V) is .
- GATE 2025 EC Q22 – The ideal BJT in the circuit given below is biased in the active region with a of 100. If I B is 10 μA, then V CE (in Volts, rounded off to two…
- GATE 2025 EC Q30 – Which of the following statements is/are TRUE with respect to ideal MOSFET-based DC-coupled single-stage amplifiers having finite load resistors?
- GATE 2025 EC Q43 – The identical MOSFETs M 1 and M 2 in the circuit given below are ideal and biased in the saturation region. M 1 and M 2 have a transconductance g m of…
- GATE 2025 EC Q47 – In the circuit shown, the identical transistors Q1 and Q2 are biased in the active region with =120. The Zener diode is in the breakdown region with V…
- GATE 2026 EC Q18 – Consider the circuit shown in the Figure with V i = 3 V and V CC = 12 V. Assume V BE=0.7 V and dc=99 for the BJT. Which of the following options is…
- GATE 2026 EC Q50 – A small signal source, V i(t)=A(105t)+B(107t) is applied to a BJT circuit as shown in the Figure. Assume zero source resistance, V BE=0.7 V, dc=99,…
- GATE 2026 EC Q60 – An n-channel MOSFET is connected as shown in the Figure. Assume V TH=1 V, V DD=5 V, and C ox(W/L)=2 mA V-2 and neglect channel length modulation…