The ideal BJT in the circuit given below is biased in the active region with a of 100. If I B is 10 μA, then V CE (in Volts, rounded off to two decimal places) is .

GATE 2025 EC – Question 22

Analog Circuits · BJT and MOSFET Amplifiers · 1 mark · Multiple choice

The ideal BJT in the circuit given below is biased in the active region with a $\beta$ of 100.

If $I_B$ is 10 μA, then $V_{CE}$ (in Volts, rounded off to two decimal places) is ________.

4.95
3.03
1.92
3.73

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Correct answer: (C) 1.92

Explanation

$I_C=\beta I_B=1$ mA and $I_E=I_C+I_B=1.01$ mA. $R_B$ connects the collector node to the base, so the 5 kΩ carries $I_C+I_B=1.01$ mA. Collector voltage $V_C=10-5\text{k}\times1.01\text{ mA}=4.95$ V. Emitter voltage $V_E=3\text{k}\times1.01\text{ mA}=3.03$ V. So $V_{CE}=4.95-3.03=1.92$ V.