The GATE Grind

GATE 2017 EE – Question 25

Power Electronics · Static V-I characteristics and firing/gating circuits for Thyristor, MOSFET, IGBT · 1 mark · Multiple choice

For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?

  1. All the four are majority carrier devices.
  2. All the four are minority carrier devices.
  3. IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.
  4. MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.

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Show answer and explanation

Correct answer: (D) MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.

Explanation

A power MOSFET conducts by majority carriers only. The IGBT, the power diode and the thyristor all have minority carrier injection in their conduction.