GATE Power Electronics: Static V-I characteristics and firing/gating circuits for Thyristor, MOSFET, IGBT – Previous Year Questions
10 GATE previous year questions on Static V-I characteristics and firing/gating circuits for Thyristor, MOSFET, IGBT (Power Electronics, Electrical Engineering) with answers and explanations, from every paper.
- GATE 2017 EE Q25 – For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?
- GATE 2016 EE Q33 – A steady dc current of 100 A is flowing through a power module (S, D) as shown in Figure (a). The V-I characteristics of the IGBT (S) and the diode…
- GATE 2016 EE Q55 – The voltage (v s) across and the current (i s) through a semiconductor switch during a turn-ON transition are shown in figure. The energy dissipated…
- GATE 2018 EE Q14 – Four power semiconductor devices are shown in the figure along with their relevant terminals. The device(s) that can carry dc current continuously in…
- GATE 2020 EE Q30 – A double pulse measurement for an inductively loaded circuit controlled by the IGBT switch is carried out to evaluate the reverse recovery…
- GATE 2022 EE Q22 – A charger supplies 100 W at 20 V for charging the battery of a laptop. The power devices, used in the converter inside the charger, operate at a…
- GATE 2023 EE Q26 – A semiconductor switch needs to block voltage V of only one polarity (V>0) during OFF state as shown in figure (i) and carry current in both…
- GATE 2024 EE Q27 – If the following switching devices have similar power ratings, which one of them is the fastest?
- GATE 2026 EE Q27 – The figure shows a straight-line approximation for the forward characteristics of a power diode. A continuous on-state current of 15 A is flowing…
- GATE 2026 EE Q28 – Consider the circuit shown in Figure (a). A gate pulse v g is applied between time instants t 0 and t 1. After t 1, during the MOSFET turn OFF…