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GATE 2016 EE – Question 33

Power Electronics · Static V-I characteristics and firing/gating circuits for Thyristor, MOSFET, IGBT · 1 mark · Numerical answer

A steady dc current of 100 A is flowing through a power module (S, D) as shown in Figure (a). The V-I characteristics of the IGBT (S) and the diode (D) are shown in Figures (b) and (c), respectively. The conduction power loss in the power module (S, D), in watts, is ________.

(a) A module with an IGBT S and an anti-parallel diode D, carrying 100 A in the direction through the diode. (b) IGBT: $V_0 = 1$ V, slope $dV/dI = 0.02\ \Omega$. (c) Diode: $V_0 = 0.7$ V, slope $dV/dI = 0.01\ \Omega$.

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Show answer and explanation

Correct answer: 169 to 171

Explanation

The 100 A flows through the anti-parallel diode, as the figure shows, so the IGBT carries no current. The diode voltage drop is $0.7 + 0.01 \times 100 = 1.7$ V. The conduction loss is $1.7 \times 100 = 170$ W.