GATE 2014 EC (EC3) – Question 19
A thin p-type silicon sample is uniformly illuminated, creating excess carriers. Recombination rate is directly proportional to ______.
Practise this question in The GATE Grind →
Show answer and explanation
Correct answer: (D) excess minority-carrier concentration
Explanation
In the low-level injection lifetime model, the excess minority-electron recombination rate in p-type material is R=Δn/τn. With lifetime fixed, it is directly proportional to the **excess minority-carrier concentration,D**, and inversely proportional to lifetime. Mobility governs transport rather than this recombination law.