GATE Electronic Devices: Carrier Transport – Previous Year Questions
14 GATE previous year questions on Carrier Transport (Electronic Devices, Electronics and Communication Engineering) with answers and explanations, from every paper.
- GATE 2017 EC Q46 – The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron…
- GATE 2017 EC Q47 – As shown, a uniformly doped Silicon (Si) bar of length L = 0.1\ m with a donor concentration N D = 1016 cm-3 is illuminated at x = 0 such that…
- GATE 2015 EC Q20 – A silicon sample is uniformly doped with donor type impurities with a concentration of 1016 /cm3. The electron and hole mobilities in the sample are…
- GATE 2015 EC Q45 – For a silicon diode with long P and N regions, the accepter and donor impurity concentrations are 1 1017 cm-3 and 1 1015 cm-3, respectively. The…
- GATE 2016 EC Q48 – The figure below shows the doping distribution in a p-type semiconductor in log scale. [Figure: A log-scale plot of N A against position. N A rises as…
- GATE 2016 EC Q49 – Consider a silicon sample at T = 300 K, with a uniform donor density N d = 5 1016 cm-3, illuminated uniformly such that the optical generation rate is…
- GATE 2019 EC Q58 – A Germanium sample of dimensions 1 cm 1 cm is illuminated with a 20 mW, 600 nm laser light source as shown in the figure. The illuminated sample…
- GATE 2022 EC Q16 – Consider a long rectangular bar of direct bandgap p-type semiconductor. The equilibrium hole density is 1017\ cm-3 and the intrinsic carrier…
- GATE 2022 EC Q56 – A p-type semiconductor with zero electric field is under illumination (low level injection) in steady state condition. Excess minority carrier density…
- GATE 2023 EC Q56 – In an extrinsic semiconductor, the hole concentration is given to be 1.5n i, where n i is the intrinsic carrier concentration of 11010 cm-3. The ratio…
- GATE 2024 EC Q26 – The free electron concentration profile n(x) in a doped semiconductor at equilibrium is shown in the figure, where the points A, B, and C mark three…
- GATE 2025 EC Q46 – The intrinsic carrier concentration of a semiconductor is 2.51016 /m3 at 300 K. If the electron and hole mobilities are 0.15 m2/Vs and 0.05 m2/Vs,…
- GATE 2025 EC Q48 – The electron mobility n in a non-degenerate germanium semiconductor at 300 K is 0.38 m2/Vs. The electron diffusivity D n at 300 K (in cm2/s, rounded…
- GATE 2026 EC Q64 – Consider that the concentration of electrons in a semiconductor bar varies linearly from 21017 cm-3 at x=1 μm to 11016 cm-3 at x=4 μm along the…